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Designed expressly for Switch-Mode Power. Supply and PFC power factor correction. V CE on max.

Industry-benchmark switching losses improve. Low IGBT conduction losses.

G4PC50W Datasheet PDF

Latest-generation IGBT design and construction offers. Lower switching losses allow more cost-effective. Of particular benefit to single-ended converters and. Low conduction losses and minimal minority-carrier. Irg4pc05w Collector Current Q. Clamped Inductive Load Current R. Reverse Voltage Avalanche Energy S. Soldering Temperature, for 10 seconds.

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IRG4PC50W – Infineon Technologies

Mounting torque, or M3 screw. Case-to-Sink, Flat, Greased Surface.

Junction-to-Ambient, typical socket mount. C unless otherwise specified.

IRG4PC50W IGBT. Datasheet pdf. Equivalent

Zero Gate Voltage Collector Current. Total Gate Charge turn-on.

Gate – Emitter Charge turn-on. Gate – Collector Charge turn-on. Energy losses include “tail”.

Measured 5mm from package. U Pulse width 5. S Repetitive rating; pulse width limited by maximum. D uty cy cle: G ate drive as irg4p50w pecified. S q uare wave: T JJunction Temperature? T CCase Temperature? I CCollector-to-emitter Current A. D ue to the 50V pow er supply, pulse w idth and inductor. SaalburgstrasseBad Ir4gpc50w Tel: Via Liguria 49, Borgaro, Torino Tel: Data and specifications subject to change without notice.